Vishay semiconductors – C&H Technology VS-100MT060WDF User Manual
Page 5
VS-100MT060WDF
www.vishay.com
Vishay Semiconductors
Revision: 01-Mar-12
4
Document Number: 93412
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Fig. 1 - Maximum IGBT Continuous Collector Current vs.
Case Temperature
Fig. 2 - IGBT Reverse BIAS SOA T
J
= 150 °C, V
GE
= 15 V
Fig. 3 - Typical IGBT Output Characteristics, T
J
= 25 °C
Fig. 4 - Typical IGBT Output Characteristics, T
J
= 125 °C
Fig. 5 - Typical IGBT Transfer Characteristics, T
J
= 125 °C
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
Maximum Allowable
Case Temperature (°C)
I
C
- Continuous Collector Current (A)
80
100
60
40
20
140
120
0
100
160
0
40
60
140
80
120
20
93412_01
I
C
(A)
V
CE
(V)
1
10
100
1000
0.01
0.1
1
93412_02
1000
10
100
I
C
(A)
V
CE
(V)
0
1
2
3
4
5
0
93412_03
250
50
150
100
200
V
GE
= 9 V
V
GE
= 12 V
V
GE
= 15 V
V
GE
= 18 V
I
C
(A)
V
CE
(V)
0
1
2
3
4
5
0
93412_04
250
50
150
100
200
V
GE
= 9 V
V
GE
= 12 V
V
GE
= 15 V
V
GE
= 18 V
I
C
(A)
V
GE
(V)
5
6
7
8
9
10
0
93412_05
250
50
150
100
200
T
C
= 125 °C
T
C
= 25 °C
I
CE
S
(mA)
V
CES
(V)
100
600
200
300
400
500
0.0001
0.001
93412_06
10
1
0.1
0.01
150 °C
25 °C