C&H Technology VS-100MT060WDF - Manual (Page 8)

VS-100MT060WDF
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Vishay Semiconductors
Revision: 01-Mar-12 7 Document Number: 93412
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Fig. 19 - Typical Q
rr
Antiparallel Diode vs. dI
F
/dt
V
rr
= 200 V, I
F
= 60 A
Fig. 20 - Typical t
rr
Chopper Diode vs. dI
F
/dt
V
rr
= 200 V, I
F
= 60 A
Fig. 21 - Typical I
rr
Chopper Diode vs. dI
F
/dt
V
rr
= 200 V, I
F
= 60 A
Fig. 22 - Typical Q
rr
Chopper Diode vs. dI
F
/dt
V
rr
= 200 V, I
F
= 40 A
Fig. 23 - Maximum Thermal Impedance Z
thJC
Characteristics (IGBT)
Q
rr
(nC)
dI
F
/dt (A/μs)
100 200 300 400
93412_19
500
300
900
1200
1500
600
T
J
= 25 °C
T
J
= 125 °C
t rr
(ns)
dI
F
/dt (A/μs)
100 200 300 400
93412_20
500
30
80
180
130
T
J
= 25 °C
T
J
= 125 °C
I rr
(A)
dI
F
/dt (A/μs)
100 200 300 400
93412_21
500
0
20
10
15
5
T
J
= 25 °C
T
J
= 125 °C
Q
rr
(nC)
dI
F
/dt (A/μs)
100 200 300 400
93412_22
500
0
1100
400
600
900
1000
200
300
500
700
800
100
T
J
= 25 °C
T
J
= 125 °C
0.001
0.01
0.1
1
0.00001
93412_23
0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impe
d
ance
Junction to Case (°C/W)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC