Vishay semiconductors – C&H Technology VS-100MT060WDF User Manual

Page 4

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VS-100MT060WDF

www.vishay.com

Vishay Semiconductors

Revision: 01-Mar-12

3

Document Number: 93412

For technical questions, contact:

[email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Note

(1)

A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the
compound.

SWITCHING CHARACTERISTICS (T

J

= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

PFC IGBT

Total gate charge

Q

g

I

C

= 60 A

V

CC

= 480 V

V

GE

= 15 V

-

460

-

nC

Gate to source charge

Q

gs

-

160

-

Gate to drain (Miller) charge

Q

gd

-

70

-

Turn-on switching loss

E

on

I

C

= 100 A, V

CC

= 360 V, V

GE

= 15 V

R

g

= 5

, L = 500 μH, T

J

= 25 °C

-

0.2

-

mJ

Turn-off switching loss

E

off

-

0.96

-

Total switching loss

E

tot

-

1.16

-

Turn-on delay time

t

d(on)

-

240

-

ns

Rise time

t

r

-

47

-

Turn-off delay time

t

d(off)

-

240

-

Fall time

t

f

-

66

-

Turn-on switching loss

E

on

I

C

= 100 A, V

CC

= 360 V, V

GE

= 15 V

R

g

= 5

, L = 500 μH, T

J

= 125 °C

-

0.33

-

mJ

Turn-off switching loss

E

off

-

1.45

-

Total switching loss

E

tot

-

1.78

-

Turn-on delay time

t

d(on)

-

246

-

ns

Rise time

t

r

-

50

-

Turn-off delay time

t

d(off)

-

246

-

Fall time

t

f

-

71

-

Input capacitance

C

ies

V

GE

= 0 V

V

CC

= 30 V

f = 1 MHz

-

9500

-

pF

Output capacitance

C

oes

-

780

-

Reverse transfer capacitance

C

res

-

120

-

THERMISTOR ELECTRICAL CHARACTERISTICS (T

J

= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP. MAX. UNITS

Resistance

R

T

J

= 25 °C

-

30 000

-

B value

B

T

J

= 25 °C/T

J

= 85 °C

-

4000

-

K

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL

MIN.

TYP.

MAX.

UNITS

AP FRED Pt Diode

Junction to case diode thermal resistance

R

thJC

-

-

4.9

°C/W

IGBT

Junction to case IGBT thermal resistance

-

-

0.27

FRED Pt
Chopper Diode

Junction to case diode thermal resistance

-

-

2.25

Case to sink, flat, greased surface per module

R

thCS

-

0.06

-

°C/W

Mounting torque ± 10 % to heatsink

(1)

-

-

4

Nm

Approximate weight

-

65

-

g

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