C&H Technology 70MT060WHTAPBF - Manual (Page 2)

Document Number: 94469 For technical questions, contact: [email protected] www.vishay.com
Revision: 06-May-08 1
"Half-Bridge" IGBT MTP
(Warp2 Speed IGBT), 70 A
70MT060WHTAPbF
Vishay High Power Products
FEATURES
• NPT warp2 speed IGBT technology with
positive temperature coefficient
• HEXFRED ® antiparallel diodes with ultrasoft
reverse recovery
• SMD thermistor (NTC)
• Al
2
O
3
BDC
• Very low stay inductance design for high speed operation
• UL pending
• Operating frequency 60 to 150 kHz
• Totally lead (Pb)-free
• Designed and qualified for industrial level
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Lower coduction losses and switching losses
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
PRODUCT SUMMARY
V
CES
600 V
V
CE(on)
typical at V
GE
= 15 V 2.1 V
I
C
at T
C
= 25 °C 70 A
MTP
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
600 V
Continuous collector current I
C
T
C
= 25 °C 100
A
T
C
= 78 °C 70
Pulsed collector current I
CM
300
Peak switching current I
LM
300
Diode continuous forward current I
F
T
C
= 78 °C 53
Peak diode forward current I
FM
200
Gate to emitter voltage V
GE
± 20
V
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500
Maximum power dissipation, IGBT P
D
T
C
= 25 °C 347
W
T
C
= 100 °C 139