Vishay high power products, Half-bridge" igbt mtp (warp2 speed igbt), 70 a, Electrical specifications (t – C&H Technology 70MT060WHTAPBF User Manual
Page 3: 25 °c unless otherwise specified), Switching characteristics (t
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Document Number: 94469
2
Revision: 06-May-08
70MT060WHTAPbF
Vishay High Power Products
"Half-Bridge" IGBT MTP
(Warp2 Speed IGBT), 70 A
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN.
TYP.
MAX.
UNITS
Collector to emitter breakdown voltage
V
(BR)CES
V
GE
= 0 V, I
C
= 500 µA
600
-
-
V
Collector to emitter voltage
V
CE(on)
V
GE
= 15 V, I
C
= 70 A
-
2.1
2.4
V
V
GE
= 15 V, I
C
= 140 A
-
2.8
3.4
V
GE
= 15 V, I
C
= 70 A, T
J
= 150 °C
-
2.7
3
Gate threshold voltage
V
GE(th)
I
C
= 0.5 mA
3
-
6
Collector to emitter leaking current
I
CES
V
GE
= 0 V, I
C
= 600 V
-
-
0.7
mA
V
GE
= 0 V, I
C
= 600 V, T
J
= 150 °C
-
-
10
Gate to emitter leakage current
I
GES
V
GE
= ± 20 V
-
-
± 250
nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN.
TYP.
MAX.
UNITS
Total gate charge (turn-on)
Q
g
I
C
= 70 A
V
CC
= 480 V
V
GE
= 15 V
-
460
690
nC
Gate to emitter charge (turn-on)
Q
ge
-
160
250
Gate to collector charge (turn-on)
Q
gc
-
70
130
Turn-on switching loss
E
on
R
G
= 10
Ω
I
C
= 70 A, V
CC
= 480 V, V
GE
= 15 V, L = 200 µH
Energy losses include tail and diode reverse
recovery
-
1.1
-
mJ
Turn-off switching loss
E
off
-
0.9
-
Total switching loss
E
ts
-
2
-
Turn-on switching loss
E
on
R
G
= 10
Ω
I
C
= 70 A, V
CC
= 480 V, V
GE
= 15 V, L = 200 µH
Energy losses include tail and diode reverse
recovery, T
J
= 150 °C
-
1.27
-
Turn-off switching loss
E
off
-
1.13
-
Total switching loss
E
ts
-
2.4
-
Turn-on delay time
td
on
R
G
= 10
Ω
I
C
= 70 A, V
CC
= 480 V, V
GE
= 15 V, L = 200 µH
Energy losses include tail and diode reverse
recovery
-
314
-
ns
Rise time
t
r
-
49
-
Turn-off delay time
td
off
-
308
-
Fail time
t
f
-
68
-
Turn-on delay time
td
on
R
G
= 10
Ω
I
C
= 70 A, V
CC
= 480 V, V
GE
= 15 V, L = 200 µH
Energy losses include tail and diode reverse
recovery, T
J
= 150 °C
-
312
-
Rise time
t
r
-
50
-
Turn-off delay time
td
off
-
320
-
Fail time
t
f
-
78
-
Input capacitance
C
ies
V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz
-
8000
-
pF
Output capacitane
C
oes
-
790
-
Reverse transfer capacitance
C
res
-
110
-
Reverse BIAS safe operating area
RBSOA
T
J
= 150 °C, I
C
= 300 A
V
CC
= 400 V, V
P
= 600 V
R
G
= 22
Ω, V
GE
= + 15 V to 0 V
Fullsquare