C&H Technology 70MT060WHTAPBF - Manual (Page 6)

Document Number: 94469 For technical questions, contact: [email protected] www.vishay.com
Revision: 06-May-08 5
70MT060WHTAPbF
"Half-Bridge" IGBT MTP
(Warp2 Speed IGBT), 70 A
Vishay High Power Products
Fig. 7 - Typical Gate Threshold Voltage
Fig. 8 - Typical Energy Losses vs. I
C
( T
J
= 150 °C)
Fig. 9 - Switching Time vs. I
C
Fig. 10 - Reverse BIAS SOA, T
J
= 150 °C
Fig. 11 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 12 - Typical Reverse Recovery Current vs. dI
F
/dt
2.5
3.0
3.5
4.0
4.5
V
GEth
(V)
I
C
(mA)
1.0 0.1
25 °C
125 °C
0
800
600
400
200
1400
1200
1000
Ener
g
y (µJ)
I
C
- Collector to Emitter Current (A)
20 40 60 80 0
E
on
E
off
100
10
1000
S
witchin
g
Time (ns)
I
C
- Collector to Emitter Current (A)
20 40 60 80 0
t
d(off)
t
d(on)
t
r
t
f
100
150
200
250
300
350
50
0
I C
- Collector to Emitter
Current (mA)
I
C
- Collector to Emitter Voltage (V)
100 200 300 400 500 600 700 0
V
R
= 200 V
I
F
= 70 A, 125 °C
I
F
= 70 A, 25 °C
60
80
100
120
140
160
100 1000
t rr
(ns)
d
IF
/dt - (A/µs)
5
10
15
20
25
30
35
40
100 1000
I RRM
(A)
d
IF
/dt - (A/µs)
V
R
= 200 V
I
F
= 70 A, 125 °C
I
F
= 70 A, 25 °C