Vishay high power products, Half-bridge" igbt mtp (warp2 speed igbt), 70 a – C&H Technology 70MT060WHTAPBF User Manual

Page 7

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Document Number: 94469

6

Revision: 06-May-08

70MT060WHTAPbF

Vishay High Power Products

"Half-Bridge" IGBT MTP

(Warp2 Speed IGBT), 70 A

Fig. 13 - Typical Stored Charge vs. dI

F

/dt

Fig. 14 - Maximum Thermal Impedance Z

thJC

Characteristics (IGBT)

Fig. 15 - Maximum Thermal Impedance Z

thJC

Characteristics (Diode)

200

400

600

800

1000

1200

1400

1600

1800

2000

100

1000

Q

RR

(nC)

d

IF

/dt - (A/µs)

I

F

= 70 A, 25 °C

I

F

= 70 A, 125 °C

V

R

= 200 V

0.001

0.01

0.1

1

Single Pulse

(Thermal Resistance)

D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20

0.00001

0.0001

0.001

0.01

0.1

1.0

10

Z

thJC

-

Thermal Impedance (°C/W)

t

1

- Rectangular Pulse Duration (s)

0.001

0.01

0.1

1.0

Single pulse

(thermal resistance)

D = 0.75
D = 0.50
D = 0.50
D = 0.33
D = 0.25
D = 0.20

0.00001

0.0001

0.001

0.01

0.1

1.0

Z

thJC

-

Thermal Impedance (°C/W)

t

1

- Rectangular Pulse Duration (s)

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