KYORITSU 1109S - Manual (Page 24)

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6-9. Measuring I
CEO
(leakage current of transistors)
# CAUTION
The leakage current does not change significantly according to
voltage, but it rather exhibits constant current characteristics.
However, note that the leakage current is very sensitive to
the temperature and varies with the temperature change
(approximately twice as against 10℃ temperature rise)
# CAUTION
When measuring I
CEO
, do not touch the base of a transistor. Base
current will flow and I
CEO
increase.
# CAUTION
If tested on the x10kΩ range, a transistor having V
CE
less than
12V could possibly be damaged. Always check the rating of a
transistor before testing.
⑴ Use the resistance measuring ranges to test transistors.
⑵ Insert the red and black test leads into the P(+) and N(−COM)
terminals respectively.
⑶ With the tips of the test leads shorted together, turn the ohm zero
adjust knob so that the meter pointer lines up with the "0" mark on
the right end of the ohm scale.
⑷ Connect the test leads to the transistors according to their polarity, as
shown in Fig. 5 Ⓐ for the NPN transistor and Fig. 5 Ⓑ for the PNP
transistor.
⑸ Fig. 5 may be represented by an electrical circuit (Fig. 6).
(Part of the circuit located on the right side of the P/N terminals
corresponds to be internal circuit of the multimeter.)
⑹ Current flowing between the P and N terminal is a reverse leakage
current I
CEO
. Take the reading on the LI scale.