Panasonic MA24F70 User Manual

Ma24f70, Silicon epitaxial planar type, Fast recovery diodes (frd)

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Fast Recovery Diodes (FRD)

Publication date: November 2008

SKJ00022AED

1

This product complies with the RoHS Directive (EU 2002/95/EC).

MA24F70

Silicon epitaxial planar type

For high speed switching circuits

Features

Super high speed switching characteristic: t

rr

= 15 ns (typ.)

Low impedance by clip bonding package (TMP)

Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Rating

Unit

Repetitive peak reverse voltage

V

RRM

700

V

Non-repetitive peak reverse surge voltage

V

RSM

700

V

Forward current

*1

I

F

1.0

A

Non-repetitive peak forward surge current

*2

I

FSM

20

A

Junction temperature

T

j

-40 to +150

°

C

Storage temperature

T

stg

-40 to +150

°

C

Note) *1: Mounted on an alumina PC board

*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)

Electrical Characteristics T

a

= 25°C±3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

V

F

I

F

= 1.0 A

1.3

1.7

V

Reverse current

I

RRM

V

RRM

= 700 V

20

m

A

Terminal capacitance

C

t

V

R

= 0 V, f = 1 MHz

25

pF

Reverse recovery time

*

t

rr

I

F

= 0.5 A, I

R

= 1.0 A

I

rr

= 0.25 A

15

45

ns

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of

current from the operating equipment.

3. *: t

rr

measurement circuit

50 Ω

50 Ω

5.5 Ω

D.U.T.

I

F

I

R

0.25 × I

R

t

rr

Package

Code

TMiniP2-F1

Pin Name

1: Anode
2: Cathode

Marking Symbol: H1

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