Panasonic Light Emitting Diodes SHD00652BEK User Manual
Lnj414k8yra, Surface mounting chip led, Light emitting diodes
SHD00652BEK
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: December 2008
1
Light Emitting Diodes
LNJ414K8YRA
Surface Mounting Chip LED
USS Type
Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Power dissipation
P
D
40
mW
Forward current
I
F
15
mA
Pulse forward current
*
I
FP
50
mA
Reverse voltage
V
R
3
V
Operating ambient temperature
T
opr
–30 to +85
°
C
Storage temperature
T
stg
–40 to +100
°
C
Note) *: The condition of I
FP
is duty 10%, Pulse width 1 msec.
Electro-Optical Characteristics T
a
= 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Luminous intensity
*
I
O
I
F
= 10 mA
0.75
1.5
mcd
Reverse current
I
R
V
R
= 3 V
10
µA
Forward voltage
V
F
I
F
= 10 mA
2.0
2.6
V
Peak emission wavelength
λ
P
I
F
= 10 mA
590
nm
Spectral half band width
Δλ
I
F
= 10 mA
30
nm
Note) *: Measurement tolerance: ±20%
0
0
0
10
20
30
20
40
60
80
100
0
1.6
1.8
2.0
2.2
2.4
−
20
20
40
60
80
100
10
1
3
5
10
30
50
100
30
50
100
300
500
1 000
20
20
40
40
60
60
80
80
100
100
0
20
40
60
80
100
600
550
650
700
1
3
5
10
30 50
100
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
80°
80°
60°
40°
20°
90°
90°
0.01
0.05
0.03
0.5
0.3
0.1
1
5
3
10
I
O
I
F
I
F
V
F
I
F
T
a
Directive characteristics
Relative luminous intensity (%)
Ambient temperature T
a
(°C)
Ambient temperature T
a
(°C)
Forward current
I
F
(mA)
Forward voltage V
F
(V)
Forward current I
F
(mA)
Luminous intensity
I
O
(mcd)
Relative luminous intensity (%)
Relative luminous intensity T
a
Relative luminous intensity λ
P
Peak emission wavelength
λ
P
(nm)
Relative luminous intensity (%)
Forward current
I
F
(mA)
Lighting Color
Amber