Panasonic 2SA1018 User Manual

Silicon pnp epitaxial planar type, Transistors, Absolute maximum ratings t

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background image

Transistors

1

Publication date: January 2003

SJC00008BED

2SA1018

Silicon PNP epitaxial planar type

For general amplification

Complementary to 2SC1473

■ Features

• High collector-emitter voltage (Base open) V

CEO

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

−250

V

Collector-emitter voltage (Base open)

V

CEO

−200

V

Emitter-base voltage (Collector open)

V

EBO

−5

V

Collector current

I

C

−70

mA

Peak collector current

I

CP

−100

mA

Collector power dissipation

P

C

750

mW

Junction temperature

T

j

150

°C

Storage temperature

T

stg

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

V

CEO

I

C

= −100 µA, I

B

= 0

−200

V

Emitter-base voltage (Collector open)

V

EBO

I

E

= −1 µA, I

C

= 0

−5

V

Collector-emitter cut-off current (Base open)

I

CEO

V

CE

= −120 V, I

B

= 0

−1

µA

Forward current transfer ratio

*

h

FE

V

CE

=

−10 V, I

C

=

−5 mA

60

220

Collector-emitter saturation voltage

V

CE(sat)

I

C

= −50 mA, I

B

= −5 mA

−1.5

V

Transition frequency

f

T

V

CB

= −10 V, I

E

= 10 mA, f = 200 MHz

50

MHz

Collector output capacitance

C

ob

V

CB

=

−10 V, I

E

=0, f

= 1 MHz

10

pF

(Common base, input open circuited)

■ Electrical Characteristics T

a

= 25°C ± 3°C

Unit: mm

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

5.0

±0.2

0.7

±0.1

0.45

+0.15

–0.1

2.5

+0.6

–0.2

0.45

+0.15

–0.1

2.5

1

2 3

+0.6

–0.2

4.0

±0.2

5.1

±

0.2

12.9

±

0.5

2.3

±

0.2

0.7

±

0.2

1 : Emitter
2 : Collector
3 : Base

TO-92-B1 Package

Rank

Q

R

h

FE

60 to 150

100 to 220

This product complies with the RoHS Directive (EU 2002/95/EC).

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