Panasonic MA22D28 - Manual

1
Schottky Barrier Diodes (SBD)
Publication date: October 2003 SKH00126AED
MA22D28
Silicon epitaxial planar type
For high speed switching
■ Features
• Forward current I
F(AV)
= 1.5 A rectification is possible
• Low forward voltage V
F
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
30 V
Repetitive peak reverse voltage V
RRM
30 V
Forward current (Average) *1 I
F(AV)
1.5 A
Non-repetitive peak forward I
FSM
30 A
surge current *2
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F1
I
F
= 0.5 A
0.34 0.38 V
V
F2
I
F
= 1.0 A
0.38 0.42
V
F3
I
F
= 1.5 A
0.42 0.46
Reverse current I
R
V
R
= 30 V
100
µA
Terminal capacitance C
t
V
R
= 10 V, f = 1 MHz
50 pF
Reverse recovery time * t
rr
I
F
= I
R
= 100 mA
13 ns
I
rr
= 10 mA , R
L
= 100 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. *: t
rr
measuring instrument
1: Anode
2: Cathode
Mini2-F1 Package
Unit: mm
5˚
1.6 ±0.1
1
2
0.80 ±0.05
0.55 ±0.1
0.16 +0.1
–0.06
3.5
± 0.1
2.6
± 0.1
0.45 ±0.1
5˚
0 to 0.1
0 to 0.3
0 to 0.1
90%
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F = 100 mA
I
R = 100 mA
R
L = 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr I
F
t
t
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
R
s = 50 Ω
Wave Form
Analyzer
(SAS-8130)
R
i = 50 Ω
V
R
A
Marking Symbol: 3Z
Note) *1: Mounted on a alumina PC board
*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
This product complies with the RoHS Directive (EU 2002/95/EC).