Panasonic 2SC1318A - Manual

Transistors
1 Publication date: March 2003 SJC00101BED
2SC1318A
Silicon NPN epitaxial planar type
For low-frequency driver amplification
Complementary to 2SA0720A
■ Features
• High collector-emitter voltage (Base open) V
CEO
• Optimum for the driver stage of a low-frequency and 25 W to 30
W output amplifier
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
80 V
Collector-emitter voltage (Base open) V
CEO
70 V
Emitter-base voltage (Collector open) V
EBO
5 V
Collector current I
C
0.5 A
Peak collector current I
CP
1 A
Collector power dissipation P
C
750 mW
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 0 80 V
Collector-emitter voltage (Base open) V
CEO
I
C
= 2 mA, I
B
= 0 70 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 0
5 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 20 V, I
E
= 0
0.1
µA
Forward current transfer ratio *1 h
FE1
*2 V
CE
= 10 V, I
C
= 150 mA
85 340

h
FE2
V
CE
= 10 V, I
C
= 500 mA
40

Collector-emitter saturation voltage V
CE(sat)
I
C
= 300 mA, I
B
= 30 mA
0.2 0.6 V
Base-emitter saturation voltage V
BE(sat)
I
C
= 300 mA, I
B
= 30 mA
0.85 1.50 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −50 mA, f = 200 MHz 120 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
11 20 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
5.0 ±0.2
0.7 ±0.1
0.45 +0.15
–0.1
2.5 +0.6
–0.2
0.45 +0.15
–0.1
2.5
1 2 3
+0.6
–0.2
4.0 ±0.2
5.1
± 0.2
12.9
± 0.5
2.3
± 0.2
0.7
± 0.2
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank Q R S
h
FE1
85 to 170 120 to 240 170 to 340
This product complies with the RoHS Directive (EU 2002/95/EC).