Philips BGD814 - Manual (Page 2)

2001 Nov 01 2
NXP Semiconductors Product specification
860 MHz, 20 dB gain power doubler
amplifier
BGD814
FEATURES
 Excellent linearity
 Extremely low noise
 Excellent return loss properties
 Silicon nitride passivation
 Rugged construction
 Gold metallization ensures excellent reliability.
APPLICATIONS
 CATV systems operating in the 40 to 870 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
PINNING - SOT115J
PIN DESCRIPTION
1 input
2, 3 common
5 +V
B
7, 8 common
9 output
handbook, halfpage
7
8
9
2
3 5 1
Side view MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 45 MHz 19.7 20.3 dB
f = 870 MHz 20.5 21.5 dB
I
tot
total current consumption (DC) V
B
= 24 V 380 410 mA
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
supply voltage

30 V
V
i
RF input voltage

70 dBmV
T
stg
storage temperature
40
+100
C
T
mb
operating mounting base temperature
20
+100
C