Philips BGD814 User Manual
Page 6
2001 Nov 01
6
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
BGD814
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200
1000
−
40
−
50
−
70
−
80
−
60
52
48
40
36
44
400
600
800
MLD348
(1)
(2)
(3)
(4)
Fig.5
Composite triple beat as a function of
frequency under tilted conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
3 .
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200
1000
−
40
−
50
−
70
−
80
−
60
52
48
40
36
44
400
600
800
MLD349
(1)
(2)
(3)
(4)
Fig.6
Cross modulation as a function of frequency
under tilted conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
3 .
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200
1000
−
50
−
60
−
80
−
90
−
70
52
48
40
36
44
400
600
800
MLD350
(1)
(2)
(3)
(4)
Fig.7
Composite second order distortion as a
function of frequency under tilted conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
3 .