Philips BGD814 - Manual (Page 5)

2001 Nov 01 5
NXP Semiconductors Product specification
860 MHz, 20 dB gain power doubler
amplifier
BGD814
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200 1000
− 50
− 60
− 80
− 90
− 70
52
48
40
36
44
400 600 800
MLD345
(1)
(2)
(3)
(4)
Fig.2 Composite triple beat as a function of
frequency under tilted conditions.
Z
S
= Z
L
= 75 ; V
B
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200 1000
− 40
− 50
− 70
− 80
− 60
52
48
40
36
44
400 600 800
MLD346
(1)
(2)
(3)
(4)
Fig.3 Cross modulation as a function of frequency
under tilted conditions.
Z
S
= Z
L
= 75 ; V
B
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
− 60
− 70
− 90
− 100
− 80
52
48
40
36
44
400 600 800
MLD347
(1)
(2)
(3)
(4)
Fig.4 Composite second order distortion as a
function of frequency under tilted conditions.
Z
S
= Z
L
= 75 ; V
B
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .