Panasonic MA26111 - Manual

This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
Publication date: May 2005 SKF00068AED 1
MA26111
Silicon epitaxial planar type
For switching circuits
 Features  
 Allowing high-density mounting  

Short reverse recovery time t  
rr
Short reverse recovery time t Short reverse recovery time t
 Small terminal capacitance C  
t
 High breakdown voltage: V  
R
High breakdown voltage: V High breakdown voltage: V = 80 V
R R
 Absolute Maximum Ratings   T
a
= 25
aa
° C
Parameter Symbol Rating Unit
Reverse voltage V
R
80 V
Maximum peak reverse voltage V
RM
V V 80 V
Forward current I
F
100 mA
Peak forward current I
FM
225 mA
Non-repetitive peak forward surge current * I
FSM
500 mA
Junction temperature T
j
TT 125 ° C
Storage temperature T
stg
TT –55 to +125 ° C
Note) * : t = 1 s
 Electrical Characteristics   T
a
= 25
aa
° C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
V V I
F
= 100 mA 0.95 1.2 V
Reverse voltage V
R
V V I
R
= 100
R R
µ A 80 V
Reverse current I
R
V
R
= 75 V
R R
100 nA
Terminal capacitance C
t
V
R
= 0, f = 1 MHz
R R
0.6 2 pF
Reverse recovery time * t
rr
tt
I
F
= 10 mA, V
R
= 6 V, I
R R rr
= 0.1 I
rrrr R
,
R R
R
L
R R = 100
LL
Ω
3 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz
3. . *: t
rr
measurement circuit
rr rr
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
tt = 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
tt
t
rr
V
R
I
F
t
t
A A
Marking Symbol: 1
Unit: mm
1: Anode
2: Cathode ML-2-N1 Package
0.60
±0.05
1.00 ±0.05
1 2
0.39 +0.01
− 0.03
0.25 ±0.05 0.25 ±0.05
0.50
±0.05
0.65 ±0.01
1
0.05 ±0.03
0.05
±0.03
2
0.01 ±0.005