Philips BGA2712 - Manual (Page 2)

2002 Sep 10 2
NXP Semiconductors Product specification
MMIC wideband amplifier BGA2712
FEATURES
 Internally matched to 50 
 Wide frequency range (3.2 GHz at 3 dB bandwidth)
 Flat 21 dB gain (DC to 2.6 GHz at 1 dB flatness)
 5 dBm saturated output power at 1 GHz
 Good linearity (11 dBm IP3
(out)
at 1 GHz)
 Unconditionally stable (K > 1.5).
APPLICATIONS
 LNB IF amplifiers
 Cable systems
 ISM
 General purpose.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
PINNING
PIN DESCRIPTION
1 V
S
2, 5 GND2
3 RF out
4 GND1
6 RF in
MAM455
1 3 2
4
1
6 3
2, 5 4
5 6
Top view
Fig.1 Simplified outline (SOT363) and symbol.
Marking code: E2-.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
S
DC supply voltage 5 6 V
I
S
DC supply current 12.3

mA
s
21
 2 insertion power gain f = 1 GHz 21.3

dB
NF noise figure f = 1 GHz 3.9

dB
P
L(sat)
saturated load power f = 1 GHz 4.8

dBm
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S
DC supply voltage RF input AC coupled

6 V
I
S
supply current

35 mA
P
tot
total power dissipation T
s
 90 C 
200 mW
T
stg
storage temperature
65
+150
C
T
j
operating junction temperature

150
C
P
D
maximum drive power

10 dBm
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.