Philips BGA2712 - Manual (Page 3)

2002 Sep 10 3
NXP Semiconductors Product specification
MMIC wideband amplifier BGA2712
THERMAL CHARACTERISTICS
CHARACTERISTICS
V
S
= 5 V; I
S
= 12.3 mA; T
j
= 25
C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to
solder point P
tot
= 200 mW; T
s
 90 C
300 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
supply current 9 12.3 15 mA
s
21
 2 insertion power gain f = 100 MHz 20 20.8 22 dB
f = 1 GHz 20 21.3 22 dB
f = 1.8 GHz 20 22 23 dB
f = 2.2 GHz 20 22 23 dB
f = 2.6 GHz 19 21.2 22 dB
f = 3 GHz 16 19.3 21 dB
R
L IN
return losses input f = 1 GHz 12 14

dB
f = 2.2 GHz 8 10

dB
R
L OUT
return losses output f = 1 GHz 17 20

dB
f = 2.2 GHz 15 18

dB
s
12
 2 isolation f = 1.6 GHz 31 33

dB
f = 2.2 GHz 36 39

dB
NF noise figure f = 1 GHz

3.9 4.3 dB
f = 2.2 GHz

4.3 4.7 dB
BW bandwidth at
s
21
 2 3 dB below flat gain at 1 GHz 2.8
3.2

GHz
K stability factor f = 1 GHz 1.5 2
 
f = 2.2 GHz 2.5 3
 
P
L(sat)
saturated load power f = 1 GHz 3 4.8

dBm
f = 2.2 GHz 0 1.3

dBm
P
L 1 dB
load power at 1 dB gain compression; f = 1 GHz
2
0.2

dBm
at 1 dB gain compression; f = 2.2 GHz
4 2 
dBm
IP3
(in)
input intercept point f = 1 GHz
12 10 
dBm
f = 2.2 GHz
14 16 
dBm
IP3
(out)
output intercept point f = 1 GHz 9 11

dBm
f = 2.2 GHz 4 6

dBm