Panasonic MA22D39 - Manual

Schottky Barrier Diodes (SBD)
Publication date: February 2008 SKH00141CED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA22D39
Silicon epitaxial planar type
For high speed switching circuits
 Features
 Optimum for forward current (Effective value) I
F(RMS)
= 1.57 A rectification
 Reverse voltage V
R
= 40 V is guaranteed
 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
40 V
Maximum peak reverse voltage V
RM
40 V
Forward current (Effective value) *1 I
F(RMS)
1.57 A
Non-repetitive peak forward surge current *2 I
FSM
30 A
Junction temperature T
j
150 ° C
Storage temperature T
stg
–55 to +150 ° C
Note) *1: Mounted on an alumina PC board
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage
V
F1
I
F
= 0.5 A 0.48
V V
F2
I
F
= 1.1 A 0.54
V
F3
I
F
= 1.5 A 0.57
Reverse current I
R
V
R
= 40 V 100 m A
Terminal capacitance C
t
V
R
= 10 V, f = 1 MHz 50 pF
Reverse recovery time * t
rr
I
F
= I
R
= 100 mA, I
rr
= 10 mA,
R
L
= 100 W
30 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i = 50 Ω
t
p = 2 µs
t
r = 0.35 ns
δ = 0.05
I
F = I R = 100 mA
R
L = 100 Ω
10%
Input Pulse Output Pulse
I
rr = 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
 Package
 Code
Mini2-F1

Pin Name
1: Anode
2: Cathode
 Marking Symbol: 3N