National Instruments DP8400 User Manual

Page 2

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background image

Indicates that there is a 3

kX

pull-up

resistor

on

these outputs when they
are disabled

TL F 5012 – 1

FIGURE 1 DP8409A Block Diagram

TABLE II DP8409A Mode Select Options

Mode

(RFSH)

M1

M0

Mode of Operation

Conditions

M2

0

0

0

0

Externally Controlled Refresh

RF I O e EOC

1

0

0

1

Auto Refresh

Forced

RF I O e Refresh Request (RFRQ)

2

0

1

0

Internal Auto Burst Refresh

RF I O e EOC

3a

0

1

1

All RAS Auto Write

RF I O e EOC

3b

0

1

1

Externally Controlled All RAS Access

All RAS Active

4

1

0

0

Externally Controlled Access

5

1

0

1

Auto Access Slow t

RAH

Hidden Refresh

6

1

1

0

Auto Access Fast t

RAH

7

1

1

1

Set End of Count

Modes 0 3b and 4 provide full control of access and re-
fresh for systems with external memory controllers or for
special purpose applications Here all timing can be directly
controlled by the external system as shown in

Figure 2

Modes 1 5 and 6 provide on-chip automatic access se-
quencing with hidden refresh capability A graphic example
of the automatic access modes of the DP8409A is shown in

Figure 3

All DRAM access timing and control is generated

from one input strobe RASIN no external clock is required
On-chip delays insure proper address and control sequenc-
ing once the valid parallel address is presented to the fall-
through input latches of the DP8409A When the RASIN
transitions high-to-low the decoded RAS output transitions
low strobing the row address into the DRAM array An on-
chip delay automatically generates a guaranteed selectable
(mode 5 or 6) row address hold time At this point the

DP8409A switches the address outputs from the row latch
to the column latch Then another on-chip delay generates
a guaranteed column address set-up time before CAS so
that the CAS output automatically strobes the column ad-
dress into the DRAM array Read or write cycles are con-
trolled by the system through independent control of the WE
buffer that is provided on-chip to minimize delay skewing
The automatic access mode makes the dynamic RAM ap-
pear static with respect to access timing In this mode only
one signal RASIN is needed after valid parallel addresses
are presented to the DP8409A to initiate proper access se-
quencing Access timing (RASIN to CAS) with full output
loading of 88 DRAMs in the auto access mode is deter-
mined by the dash number given on the DP8409A data
sheet All performance characteristics are specified over the
full operating temperature and supply ranges

2

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