NXP Semiconductors PiP3209-R - Manual (Page 2)

Philips Semiconductors Product Specification
TOPFET high side switch PIP3209-R
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
BG
Continuous supply voltage 0 50 V
I
L
Continuous load current T
mb
≤
114˚C - 6 A
P
D
Total power dissipation T
mb
≤
25˚C - 41 W
T
stg
Storage temperature -55 175 ˚C
T
j
Continuous junction temperature 1 - 150 ˚C
T
sold
Mounting base temperature during soldering - 260 ˚C
Reverse battery voltages 2
-V
BG
Continuous reverse voltage - 16 V
-V
BG
Peak reverse voltage - 32 V
Application information
R
I
, R
S
External resistors 3 to limit input, status currents 3.2 - k
Ω
Input and status
I
I
, I
S
Continuous currents -5 5 mA
I
I
, I
S
Repetitive peak currents
δ ≤
0.1, tp = 300
µ
s -50 50 mA
Inductive load clamping I
L
= 1 A, V
BG
= 16 V
E
BL
Non-repetitive clamping energy T
j
= 150˚C prior to turn-off - 75 mJ
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 k
Ω
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Thermal resistance 4
R
th j-mb
Junction to mounting base - - 2.5 3 K/W
1 For normal continuous operation. A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates
to protect the switch.
2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must
limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the T
j
rating must be observed.
3 To limit currents during reverse battery and transient overvoltages (positive or negative).
4 Of the output power MOS transistor.
July 2001 2 Rev 1.000