NXP Semiconductors PiP3209-R - Manual (Page 4)

Philips Semiconductors Product Specification
TOPFET high side switch PIP3209-R
INPUT CHARACTERISTICS
9 V
≤
V
BG
≤
16 V. Limits are at -40˚C
≤
T
mb
≤
150˚C and typicals at T
mb
= 25 ˚C unless otherwise stated.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
I
Input current V
IG
= 5 V 20 90 160
µ
A
V
IG
Input clamping voltage I
I
= 200
µ
A 5.5 7 8.5 V
V
IG(ON)
Input turn-on threshold voltage - 2.4 3 V
V
IG(OFF)
Input turn-off threshold voltage 1.5 2.1 - V
∆
V
IG
Input turn-on hysteresis - 0.3 - V
I
I(ON)
Input turn-on current V
IG
= 3 V - - 100
µ
A
I
I(OFF)
Input turn-off current V
IG
= 1.5 V 10 - -
µ
A
STATUS CHARACTERISTICS
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
Limits are at -40˚C
≤
T
mb
≤
150˚C and typicals at T
mb
= 25 ˚C unless otherwise stated. Refer to TRUTH TABLE .
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
SG
Status clamping voltage I
S
= 100
µ
A 5.5 7 8.5 V
V
SG
Status low voltage I
S
= 100
µ
A - - 1 V
T
mb
= 25˚C - 0.7 0.8 V
I
S
Status leakage current V
SG
= 5 V - - 15
µ
A
T
mb
= 25˚C - 0.1 1
µ
A
I
S
Status saturation current 1 V
SG
= 5 V 2 7 12 mA
Application information
R
S
External pull-up resistor - 47 - k
Ω
OPEN CIRCUIT DETECTION CHARACTERISTICS
An open circuit load can be detected in the on-state. Refer to TRUTH TABLE .
Limits are at -40˚C
≤
T
mb
≤
150˚C and typical is at T
mb
= 25 ˚C.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Open circuit detection 9 V
≤
V
BG
≤
35 V
I
L(TO)
Low current detect threshold 50 - 340 mA
T
j
= 25˚C 85 170 255 mA
∆
I
L(TO)
Hysteresis - 30 - mA
1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to
prevent possible interference with normal operation of the device.
July 2001 4 Rev 1.000