Write operations – Rainbow Electronics AT45DB161D User Manual

Page 35

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35

3500O–DFLASH–11/2012

AT45DB161D

21.7

Command Sequence for Read/Write Operations for Page Size 512-Bytes (Except Status
Register Read, Manufacturer and Device ID Read)

21.8

Command Sequence for Read/Write Operations for Page Size 528-Bytes (Except Status
Register Read, Manufacturer and Device ID Read)

22.

Write Operations

The following block diagram and waveforms illustrate the various write sequences available.

SI (INPUT)

CMD 8-bits

8-bits

8-bits

Page Address

(A20 - A9)

X X X X X X X

X X X X X X X X X

LSB

X X X X X X X X

Byte/Buffer Address

(A8 - A0/BFA8 - BFA0)

MSB

Don’t Care

Bits

Page Address

(PA11 - PA0)

Byte/Buffer Address

(BA9 - BA0/BFA9 - BFA0)

SI (INPUT)

CMD 8-bits

8-bits

8-bits

X X X X X X X X

X X X X

LSB

X X X X X X X X

MSB

2 Don’t Care

Bits

X X X X

FLASH MEMORY ARRAY

PAGE (512-/528-BYTES)

BUFFER 2 (512-/528-BYTES)

BUFFER 1 (512-/528-BYTES)

I/O INTERFACE

SI

BUFFER 1 TO

MAIN MEMORY

PAGE PROGRAM

BUFFER 2 TO
MAIN MEMORY
PAGE PROGRAM

BUFFER 1

WRITE

BUFFER 2
WRITE

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