Diodes ZXTN649F - Manual (Page 2)

ZXTN649F
Document number: DS31900 Rev. 3 - 2
2 of 7
www.diodes.com
January 2013
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A Product Line of
Diodes Incorporated
ZXTN649F
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
35 V
Collector-Emitter Voltage V
CEO
25 V
Emitter-Base Voltage V
EBO
7 V
Continuous Collector Current I
C
3 A
Peak Pulse Current I
CM
6 A
Base Current I
B
500 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
725 mW
Thermal Resistance, Junction to Ambient (Note 5) R
θJA
172 °C/W
Thermal Resistance, Junction to Leads (Note 6) R
θJL
79 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
ESD Ratings
(Note 7)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM ≥ 8,000 V 3B
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 5. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (at the end of collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.