Diodes ZXTN649F - Manual (Page 3)

ZXTN649F
Document number: DS31900 Rev. 3 - 2
3 of 7
www.diodes.com
January 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN649F
Thermal Characteristics and Derating information
100m 1 10
10m
100m
1
10
Single Pulse
T
amb
=25°C
V
CE(sat)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
I C
C
o
lle
ct
or
Curr
ent
(A
)
V
CE
Collector-Emitter Voltage (V)
0 20 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6
0.8
Derating Curve
Temperature (°C) M
a
x
P
o
w
e
r D
is
si
pat
ion (W)
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
100
120
140
160
180
T
amb
=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
T
her
m
a
l Res
is
tance
(°
C
/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
Ma
xi
mu
m Po
w
e
r
(W
)