Diodes ZXTN649F - Manual (Page 4)

ZXTN649F
Document number: DS31900 Rev. 3 - 2
4 of 7
www.diodes.com
January 2013
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A Product Line of
Diodes Incorporated
ZXTN649F
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
35 110 - V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 8) BV
CEO
25 35 - V I
C
= 10mA
Emitter-Base Breakdown Voltage BV
EBO
7 8.1 - V I
E
= 100µA
Collector Cut-off Current I
CBO
- <1 50
0.5
nA
µA V
CB
= 28V
V
CB
= 28V, T
A
= +100°C
Emitter Cut-off Current I
EBO
- <1 50 nA V
EB
= 5.6V
Static Forward Current Transfer Ratio (Note 8) h
FE
200
175
155
50
320
280
250
85
500
-
-
-
-
I
C
= 100mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 2A, V
CE
= 2V
I
C
= 6A, V
CE
= 2V
Collector-Emitter Saturation Voltage (Note 8) V
CE(sat)
-
- 70
200
120
300
mV
I
C
= 1A, I
B
= 100mA
I
C
= 3A, I
B
= 300mA
Base-Emitter Saturation Voltage (Note 8) V
BE(sat)
- 900 1000 mV I
C
= 1A, I
B
= 100mA
Base-Emitter Saturation Voltage (Note 8) V
BE(on)
- 780 850 mV I
C
= 1A, V
CE
= 2V
Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%