Diodes ZXTD4591E6 - Manual (Page 2)

ISSUE 1 - JULY 2000
ZXTD4591E6
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R θ
JA
113 °C/W
Junction to Ambient (b) R θ
JA
73 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t
р5 secs.
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT NPN LIMIT PNP UNIT
Collector-Base Voltage V
CBO
80 -80 V
Collector-Emitter Voltage V
CEO
60 -60 V
Emitter-Base Voltage V
EBO
5 -5 V
Peak Pulse Current I
CM
2 -2 A
Continuous Collector Current I
C
1 -1 A
Base Current I
B
500 -500 mA
Power Dissipation at TA=25°C (a)
Linear Derating Factor
P
D
1.1
8.8 1.1
8.8 W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
P
D
1.7
13.6
1.7
13.6
W
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 -55 to +150 °C