Npn electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTD4591E6 User Manual
Page 4
![background image](/manuals/305404/4/background.png)
ISSUE 1 - JULY 2000
ZXTD4591E6
NPN
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
80
V
I
C
=100
A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
60
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
100
nA
V
CB
=60V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=4V
Collector Emitter Cut-Off Current
I
CES
100
nA
V
CES
=60V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.25
0.5
V
V
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=100mA*
Base-Emitter Saturation Voltage
V
BE(sat)
1.1
V
I
C
=1A, I
B
=100mA*
Base-Emitter Turn-On Voltage
V
BE(on)
1.0
V
I
C
=1A, V
CE
=5V*
Static Forward Current Transfer
Ratio
h
FE
100
100
80
30
300
I
C
=1mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
10
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
4