Diodes ZXTD4591E6 - Manual (Page 3)

ISSUE 1 - JULY 2000
ZXTD4591E6
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage V
(BR)CBO
-80 V I
C
=-100 ␮A
Collector-Emitter Breakdown
Voltage V
(BR)CEO
-60 V I
C
=-10mA*
Emitter-Base Breakdown Voltage V
(BR)EBO
-5 V I
E
=-100
␮A
Collector Cut-Off Current I
CBO
-100 nA V
CB
=-60V
Emitter Cut-Off Current I
EBO
-100 nA V
EB
=-4V
Collector Emitter Cut-Off Current I
CES
-100 nA V
CES
=-60V
Collector-Emitter Saturation
Voltage V
CE(sat)
-0.3
-0.6 V
V I
C
=-500mA, I
B
=-50mA*
I
C
=-1A, I
B
=-100mA*
Base-Emitter Saturation Voltage V
BE(sat)
-1.2 V I
C
=-1A, I
B
=-100mA*
Base-Emitter Turn-On Voltage V
BE(on)
-1.0 V I
C
=-1A, V
CE
=-5V*
Static Forward Current Transfer
Ratio h
FE
100
100
80
15
300
I
C
=-1mA, V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
Transition Frequency f
T
150 MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance C
obo
10 pF V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3