Diodes ZXGD3002E6 - Manual

Issue 1 - October 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
ZXGD3002E6
9A(peak) Gate driver in SOT23-6
General description
The ZXGD3002E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 9A
into a MOSFET or IGBT gate capacitive load from supply voltages up to 20V. With typical propagation
delay times down to 2ns and rise/fall times down to 11ns this device ensures rapid switching of the
power MOSFET or IGBT to minimize power losses and distortion in high current fast switching
applications.
The ZXGD3002E6 is inherently rugged to latch-up and shoot-through, and its wide supply voltage
range allows full enhancement to minimize on-losses of the power MOSFET or IGBT.
Its low input voltage requirement and high current gain allows high current driving from low voltage
controller ICs, and the optimized pin-out SOT23-6 package with separate source and sink pins eases
board layout, enabling reduced parasitic inductance and independent control of rise and fall slew rates.
Features
• 20V operating voltage range
• 9 Amps peak output current
• Fast switching emitter-follower configuration
• 2ns propagation delay time
• 11ns rise/fall time, 1000pF load
• Low input current requirement
• 2.2A(source)/2.0A(sink) output current from 10mA input
• SOT23-6 package
• Separate source and sink outputs for independent control of rise and fall time
• Optimized pin-out to ease board layout and minimize trace inductance
• No Latch Up
• No shoot through
• Near - Zero quiescent and output leakage current
Typical application circuit
GND
SINK
V
CC
IN
1
IN
2
SOURCE
V
S
Input
V
CC
Input ZXGD3002