Switching time test circuits timing diagram, Electrical characteristics (at t – Diodes ZXGD3002E6 User Manual
Page 4
ZXGD3002E6
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated).
Switching Time Test Circuits Timing Diagram
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Output voltage, high
V
OH
V
CC
–
0.4
V
I
SOURCE
= 1
A
Output voltage, low
V
OL
0.4
V
I
SINK
= 1
A
Source output leakage
current
I
L(source)
1
A
V
CC
= 20V,
V
IN1
=
V
IN2
= 0V
Sink output leakage
current
I
L(sink)
1
A
V
CC
= 20V,
V
IN1
=
V
IN2
= V
CC
Quiescent current
I
Q
50
nA
V
CC
= 16V,
V
IN1
=
V
IN2
= 0V
Source output current
I
(source)
1.6
2.2
A
I
IN1
+ I
IN2
= 10mA
Sink output current
I
(sink)
1.4
2.0
A
I
IN1
+ I
IN2
= 10mA
Source output current
I
(source)PK
9
A
I
IN1
+ I
IN2
= 1A
Sink output current
I
(sink)PK
9
A
I
IN1
+ I
IN2
= 1A
Gate driver
switching times
t
d(rise)
t
r
t
d(fall)
t
f
1.25
8.3
1.6
10.8
ns
ns
ns
ns
C
L
=1nF, R
L
=1
⍀,
V
CC
=12V, V
IN
=10V,
R
S
=25
⍀
Gate driver
switching times
t
d(rise)
t
r
t
d(fall)
t
f
3.6
105
6.9
115
ns
ns
ns
ns
C
L
=1nF, R
L
=1
⍀,
V
CC
=12V, V
IN
=10V,
R
S
=1k
⍀