Diodes ZXMN6A09K - Manual (Page 2)

ZXMN6A09K
Document Number DS33569 Rev. 6 - 2
2 of 8
www.diodes.com
March 2012
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A Product Line of
Diodes Incorporated
ZXMN6A09K
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source voltage V
DSS
60 V
Gate-Source voltage V
GS
±20 V
Continuous Drain current V GS = 10V
(Note 4)
I D
11.8
A T
A
= 70
°C (Note 4) 9.6
(Note 3) 7.7
Pulsed Drain current (Note 5) I
DM
43 A
Continuous Source current (Body diode) (Note 4) I
S
10.8 A
Pulsed Source current (Body diode) (Note 5) I SM
43 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 3)
P
D
4.3
34.4
W
mW/
°C
(Note 4)
10.1
80.8
(Note 6)
2.15
17.2
Thermal Resistance, Junction to Ambient
(Note 3)
R θJA
29
°C/W
(Note 4) 12.3
(Note 6) 58.1
Thermal Resistance, Junction to Lead (Note 7) R θJL 1.04
Operating and storage temperature range T
J
, T
STG
-55 to 150 °C
Notes: 3. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. For a device surface mounted on FR4 PCB measured at t
≤ 10 sec.
5. Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).