Electrical characteristics, Zxmn6a09k, A product line of diodes incorporated – Diodes ZXMN6A09K User Manual

Page 4

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ZXMN6A09K

Document Number DS33569 Rev. 6 - 2

4 of 8

www.diodes.com

March 2012

© Diodes Incorporated

A Product Line of

Diodes Incorporated

ZXMN6A09K





Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS
Drain-Source Breakdown Voltage

BV

DSS

60

V

I

D

= 250

μA, V

GS

= 0V

Zero Gate Voltage Drain Current

I

DSS

1

μA

V

DS

= 60V, V

GS

= 0V

Gate-Source Leakage

I

GSS

±100

nA

V

GS

=

±20V, V

DS

= 0V

ON CHARACTERISTICS
Gate Threshold Voltage

V

GS(th)

1.0

3.0 V

I

D

= 250

μA, V

DS

= V

GS

Static Drain-Source On-Resistance (Note 8)

R

DS (ON)

40

m

V

GS

= 10V, I

D

= 7.3A

60

V

GS

= 4.5V, I

D

= 5.6A

Forward Transconductance (Notes 8 & 9)

g

fs

15

S

V

DS

= 15V, I

D

= 7.3A

Diode Forward Voltage (Note 8)

V

SD

0.85 0.95 V

I

S

= 6.6A, V

GS

= 0V, T

J

= 25°C

Reverse recovery time (Note 9)

t

rr

25.6

ns

I

S

= 3A, di/dt = 100A/

μs

T

J

= 25°C

Reverse recovery charge (Note 9)

Q

rr

26.0

nC

DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance

C

iss

1426

pF

V

DS

= 30V, V

GS

= 0V

f = 1MHz

Output Capacitance

C

oss

134

pF

Reverse Transfer Capacitance

C

rss

64

pF

Total Gate Charge (Note 10)

Q

g

15

nC

V

GS

= 4.5V, V

DS

= 30V, I

D

= 5.6A

Total Gate Charge (Note 10)

Q

g

29

nC

V

GS

= 10V, V

DS

= 30V

I

D

= 7.3A

Gate-Source Charge (Note 10)

Q

gs

7.0

nC

Gate-Drain Charge (Note 10)

Q

gd

4.7

nC

Turn-On Delay Time (Note 10)

t

D(on)

4.8

ns

V

DD

= 30V, V

GS

= 10V

I

D

= 1A, R

G

≅ 6.0Ω

Turn-On Rise Time (Note 10)

t

r

4.6

ns

Turn-Off Delay Time (Note 10)

t

D(off)

32.5

ns

Turn-Off Fall Time (Note 10)

t

f

14.5

ns

Notes:

8. Measured under pulsed conditions. Pulse width

≤ 300μs; duty cycle ≤ 2%

9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.


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