Diodes ZXMN6A09K - Manual (Page 4)

ZXMN6A09K
Document Number DS33569 Rev. 6 - 2
4 of 8
www.diodes.com
March 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN6A09K
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
60 ⎯ ⎯ V I
D
= 250
μA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 1
μA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1.0 ⎯ 3.0 V I
D
= 250 μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 8) R
DS (ON)
⎯ ⎯
40
m Ω
V GS = 10V, I D = 7.3A
60 V
GS
= 4.5V, I
D
= 5.6A
Forward Transconductance (Notes 8 & 9) g
fs
⎯ 15 ⎯ S V
DS
= 15V, I
D
= 7.3A
Diode Forward Voltage (Note 8) V
SD
⎯ 0.85 0.95 V I
S
= 6.6A, V
GS
= 0V, T
J
= 25°C
Reverse recovery time (Note 9) t
rr
25.6 ⎯ ns I
S
= 3A, di/dt = 100A/ μs
T
J
= 25°C Reverse recovery charge (Note 9) Q
rr
⎯ 26.0 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
⎯ 1426 ⎯ pF
V
DS
= 30V, V
GS
= 0V
f = 1MHz
Output Capacitance C
oss
⎯ 134 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 64 ⎯ pF
Total Gate Charge (Note 10) Q
g
⎯ 15 ⎯ nC V
GS
= 4.5V, V
DS
= 30V, I
D
= 5.6A
Total Gate Charge (Note 10) Q
g
⎯ 29 ⎯ nC
V
GS
= 10V, V
DS
= 30V
I
D
= 7.3A
Gate-Source Charge (Note 10) Q
gs
⎯ 7.0 ⎯ nC
Gate-Drain Charge (Note 10) Q gd
⎯ 4.7 ⎯ nC
Turn-On Delay Time (Note 10) t
D(on)
⎯ 4.8 ⎯ ns
V
DD
= 30V, V
GS
= 10V
I
D
= 1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 10) t
r
⎯ 4.6 ⎯ ns
Turn-Off Delay Time (Note 10) t D(off)
⎯ 32.5 ⎯ ns
Turn-Off Fall Time (Note 10) t
f
⎯ 14.5 ⎯ ns
Notes: 8. Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.