Zxmn6a09k, Typical characteristics - continued, Test circuits – Diodes ZXMN6A09K User Manual
Page 6: Capac it anc e ( pf) v, Drain - source voltage (v), Q - charge (nc) v
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ZXMN6A09K
Document Number DS33569 Rev. 6 - 2
6 of 8
March 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN6A09K
Typical Characteristics - continued
0.1
1
10
0
200
400
600
800
1000
1200
1400
1600
1800
2000
C
RSS
C
OSS
C
ISS
V
GS
= 0V
f = 1MHz
C
C
apac
it
anc
e
(
pF)
V
DS
- Drain - Source Voltage (V)
0
5
10
15
20
25
30
0
2
4
6
8
10
I
D
= 7.3A
V
DS
= 30V
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Q - Charge (nC)
V
GS
G
a
te-
S
our
c
e
V
o
lt
a
ge
(V
)
Test Circuits
Current
regulator
Charge
Gate charge test circuit
Switching time test circuit
Basic gate charge waveform
Switching time waveforms
D.U.T
50k
0.2
F
12V
Same as
D.U.T
V
GS
V
GS
V
DS
V
G
Q
GS
Q
GD
Q
G
V
GS
90%
10%
t
(on)
t
(on)
t
d(on)
t
r
t
r
t
d(off)
V
DS
V
DD
R
D
R
G
Pulse width
Ͻ 1S
Duty factor 0.1%
V
DS
I
D
I
G
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