Diodes ZXMN6A11G - Manual (Page 2)

ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
2 of 8
www.diodes.com
October 2010
© Diodes Incorporated
ZXMN6A11G
A Product Line of
Diodes Incorporated
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V DSS
60
V
Gate-Source Voltage V
GS
±20
Continuous Drain Current V GS = 10V
(Note 3)
T
A = 70°C (Note 3)
(Note 2)
I D
4.4
3.5
3.1
A
Pulsed Drain Current V
GS
= 10V (Note 4) I
DM
15.6
Continuous Source Current (Body Diode) (Note 3) I S
5
Pulsed Source Current (Body Diode) (Note 4) I
SM
15.6
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
(Note 2)
P
D
2.0
16 W
mW/°C
(Note 3)
3.9
31
Thermal Resistance, Junction to Ambient
(Note 2)
R θJA
62.5
°C/W (Note 3) 32.0
Thermal Resistance, Junction to Lead (Note 5) R θJL 9.8
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t
≤ 10 sec.
4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300 μs.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).