Diodes ZXMN6A11G - Manual (Page 6)

ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
6 of 8
www.diodes.com
October 2010
© Diodes Incorporated
ZXMN6A11G
A Product Line of
Diodes Incorporated
Typical Characteristics - continued
1 10
0
100
200
300
400
500
C
RSS
C
OSS
C
ISS
V
GS
= 0V
f = 1MHz
C
Cap
a
ci
ta
nce (pF
)
V
DS
- Drain - Source Voltage (V)
0 1 2 3 4 5 6
0
2
4
6
8
10
I
D
= 2.5A
V
DS
= 30V
Gate-Source Voltage v Gate Charge Capacitance v Drain-Source Voltage
Q - Charge (nC)
V
GS
G
a
te
-S
o
u
rce
V
o
lt
ag
e (
V
)
Test Circuit
Current
regulator
Charge
Gate charge test circuit
Switching time test circuit
Basic gate charge waveform
Switching time waveforms
D.U.T
50k 12V Same as
D.U.T
V
GS
V
GS
V
DS
V
G
Q
GS
Q
GD
Q
G
V
GS
90%
10%
t
(on)
t
(on)
t
d(on)
t
r
t
r
t
V
DS
DD
V
R
D
R
G
V
DS
I
D
I
G
d(off)