Diodes ZXMN6A11G - Manual (Page 4)

ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
4 of 8
www.diodes.com
October 2010
© Diodes Incorporated
ZXMN6A11G
A Product Line of
Diodes Incorporated
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
60 ⎯ ⎯ V I
D
= 250 μA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 1.0 μA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100
nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1.0 ⎯ 3.0 V I
D
= 250
μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 6) R
DS (ON)
⎯ 0.105 0.120
Ω
V
GS
= 10V, I
D
= 2.5A
⎯ 0.150 0.180 V GS = 4.5V, I D = 2A
Forward Transconductance (Notes 6 & 7) g
fs
⎯ 4.9 ⎯ S V
DS
= 15V, I
D
= 2.5A
Diode Forward Voltage (Note 6) V
SD
⎯
0.85 0.95 V I
S
= 2.8A, V
GS
= 0V, T
J
= 25°C
Reverse Recovery Time (Note 7) t
rr
⎯ 21.5 ⎯ ns I
S
= 2.8A, di/dt = 100A/
μs
T
J
= 25°C Reverse Recovery Charge (Note 7) Q
rr
⎯ 20.5 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C iss
⎯ 330 ⎯
pF
V DS = 40V, V GS = 0V,
f = 1.0MHz
Output Capacitance C
oss
⎯ 35.2 ⎯
Reverse Transfer Capacitance C
rss
⎯
17.1
⎯
Gate Charge (Note 8) Q
g
⎯ 3.0 ⎯
nC
V
GS
= 4.5V
V
DS
= 15V
I
D
= 2.5A
Total Gate Charge (Note 8) Q
g
⎯ 5.7 ⎯
V
GS
= 10V Gate-Source Charge (Note 8) Q
gs
⎯ 1.25 ⎯
Gate-Drain Charge (Note 8) Q
gd
⎯ 0.86 ⎯
Turn-On Delay Time (Note 8) t D(on)
⎯ 1.95 ⎯
ns
V DD = 30V, I D = 2.5A,
R G = 6
Ω, V
GS = 10V
Turn-On Rise Time (Note 8) t
r
⎯ 3.5 ⎯
Turn-Off Delay Time (Note 8) t
D(off)
⎯ 8.2 ⎯
Turn-Off Fall Time (Note 8) t f
⎯ 4.6 ⎯
Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300 μ
s; duty cycle ≤ 2%.
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperature.