Diodes ZXMN0545G4 - Manual

SUMMARY
V
(BR)DSS
= 450V; R
DS(ON)
= 50 ; I
D
= 140mA
DESCRIPTION
This 450V enhancement mode N-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
FEATURES
•
High voltage
•
Low on-resistance
•
Fast switching speed
•
Low gate drive
•
Low threshold
•
SOT223 package variant engineered to increase spacing between
high voltage pins
APPLICATIONS
•
Off-line power supply start-up circuitry
ORDERING INFORMATION
DEVICE REEL SIZE
(inches)
TAPE WIDTH (mm) QUANTITY
PER REEL
ZXMN0545G4TA 7 12mm embossed 1,000 units
ZXMN0545G4TC 13 12mm embossed 4,000 units
DEVICE MARKING
ZXMN
0545
ZXMN0545G4
ISSUE 1 - JANUARY 2006
450V N-CHANNEL ENHANCEMENT MODE MOSFET
1
N/C
PINOUT - TOP VIEW
SOT223