Diodes ZXMN0545G4 - Manual (Page 4)

ZXMN0545G4
ISSUE 1 - JANUARY 2006
4
No
rm
a
lis
e
d
R
n
o(
S
D)
d
n
aV
G
S(
th)
0 4 - 0 8 0 6 0 4 0 2 0 0 2 - 0 2 1 0 6 1 0 4 1 0 0 1
4 . 2
2 . 2
0 . 2
8 . 1
6 . 1
4 . 1
2 . 1
0 . 1
6 . 0
8 . 0
i a r
D
S -
n
c r
u o
e
R
s e
is
c
n
a t
e
R D
(
S
on
)
G e t a Th s e r hold Vo tl
g a e V
S G ( h t )
T j ) C ( e r u t a r e p m e T n o i t c n u J -
4 . 0
0 8 - 0 6 -
I = D A 1 . 0
V = S G V 0 1
I = D A m 1
V = S G V S D
V S G e g a t l o V e c r u o S e t a G - ) s t l o V (
R
S
D(
O
N
)
-D
ra
S
nio
r
uc
e
e
R s
ist
a
n
ce
(
)
0 2 0 1 9 8 7 6 5 4 3 2 1
I = D
A m 0 5 2
A m 0 0 1 0 3
0 1
0 0 1
0 2
0 4
0 5
0 6
0 7
0 8
0 9
A m 0 5
Output characteristics Saturation characteristics
Voltage saturation characteristics
On-resistance vs gate-source voltage Normalised R
DS(on)
and V
GS(th)
temperature
Transfer characteristics
V S D e c r u o S n i a r D - ) s t l o V ( e g a t l o V
I D(
O
n
)
On-
St
a
r
D
et
ain
u
C
rr
e
n
t
(m
A)
V
-
S
D
e
cr
u
o
S
ni
ar
D
Vg
atl
oe
(
V
o
tls
)
V - S G e g a t l o V e c r u o S e t a G ) s t l o V (
I = D
A m 0 5 2
A m 0 0 1 I D(O
n
)
Dra
in
u
C
rr
e
t
n
(mA
)
V - S G e c r u o S e t a G ) s t l o V ( e g a t l o V
I D(
O
n
)
D
ra
i
C
nu
rr
e
m(
t
nA
)
V S D e c r u o S n i a r D - ) s t l o V ( e g a t l o V
A m 0 5
0 1 8 6 4 2 0 1 9 8 7 6 5 4 3 2 1 0
V = S D
V 5 2
0 0 1 0 9 0 8 0 7 0 6 0 5 0 4 0 3 0 2 0 1 0 0 2 6 1 2 1 8 4 0
2 1
0
4
8
6 1
0 2
V 0 1
V 6
V 4
V 3
V S G = 0 0 8
0 0 6
0 0 2
0
0 0 4
0 0 7
0 0 5
0 0 3
0 0 1
V 8
V 5
V 0 1
V 6
V 4
V 3
V S G =
0
0 0 2
0 0 4
0 0 3
0 0 1
V 5
0 0 3
0
0 0 1
0 0 2
0 0 4
0 0 5
TYPICAL CHARACTERISTICS