Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXMN0545G4 User Manual
Page 3
ZXMN0545G4
ISSUE 1 - JANUARY 2006
3
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS
Drain-Source
Breakdown Voltage
BV
DSS
450
V
I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
1
3
V
I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
20
nA
V
GS
=
Ϯ20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
10
400
µA
µA
V
DS
=450 V, V
GS
=0V
V
DS
=405 V, V
GS
=0V,
T=125°C
(2)
On-State Drain Current
(1)
I
D(on)
150
mA
V
DS
=25 V, V
GS
=10V
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
50
Ω
V
GS
=10V, I
D
=100mA
Forward Transconductance
(1)(2)
g
fs
100
mS
V
DS
=25V, I
D
=100mA
Input Capacitance
(2)
C
iss
70
pF
Common Source Output
Capacitance
(2)
C
oss
10
pF
V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
4
pF
Turn-On Delay Time
(2)(3)
t
d(on)
7
ns
V
DD
=25V, I
D
=100mA
Rise Time
(2)(3)
t
r
7
ns
Turn-Off Delay Time
(2)(3)
t
d(off)
16
ns
Fall Time
(2)(3)
t
f
10
ns
(1) Measured under pulsed conditions. Width=300
µs. Duty cycle Յ2%
(2) Sample test.
(3) Switching times measured with 50
Ω source impedance and <5ns rise time on a pulse generator