Diodes ZXMN10A25K - Manual (Page 2)

ZXMN10A25K
Document number: DS33569 Rev. 3 - 2
2 of 8
www.diodes.com
July 2012
© Diodes Incorporated
ZXMN10A25K
A Product Line of
Diodes Incorporated
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source voltage V
DSS
100 V
Gate-Source voltage V
GS
±20 V
Continuous Drain current V
GS
= 10V
(Note 7)
I
D
6.4
A T
A
= +70 °C (Note 7) 5
(Note 6) 4.2
Pulsed Drain current (Note 8) I
DM
21 A
Continuous Source current (Body diode) (Note 7) I
S
10 A
Pulsed Source current (Body diode) (Note 8) I
SM
21 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 6)
P D
4.25
34
W
mW/
°C
(Note 7)
9.85
78.7
(Note 9)
2.11
16.8
Thermal Resistance, Junction to Ambient
(Note 6)
R θJA
29.4
°C/W
(Note 7) 12.7
(Note 9) 59.1
Thermal Resistance, Junction to Lead (Note 10) R θJL 1.43
Operating and storage temperature range T
J
, T
STG
-55 to 150 °C
Notes: 6. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. For a device surface mounted on FR4 PCB measured at t
≤ 10 sec.
8. Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
9. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).