Diodes ZXMN10A25K - Manual (Page 4)

ZXMN10A25K
Document number: DS33569 Rev. 3 - 2
4 of 8
www.diodes.com
July 2012
© Diodes Incorporated
ZXMN10A25K
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
100 ⎯ ⎯ V I
D
= 250µA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 0.5
μA
V
DS
= 100V, V
GS
= 0V
Gate-Source Leakage I GSS
⎯ ⎯ ±100 nA V GS =
±20V, V
DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
2.0 ⎯ 4.0 V I
D
= 250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 11) R
DS (ON)
⎯ ⎯
125
m Ω
V GS = 10V, I D = 3.2A
150 V
GS
= 6V, I
D
= 2.6A
Forward Transconductance (Notes 11 & 12) g
fs
⎯ 7.3 ⎯ S V
DS
= 15V, I
D
= 2.9A
Diode Forward Voltage (Note 11) V
SD
⎯ 0.85 0.95 V I
S
= 3.2A, V
GS
= 0V, T
J
= +25°C
Reverse recovery time (Note 12) t
rr
40.5 ⎯ ns I
S
= 2.9A, di/dt = 100A/µs
T J = +25°C Reverse recovery charge (Note 12) Q
rr
⎯ 62 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
C
iss
⎯ 859 ⎯ pF
V
DS
= 50V, V
GS
= 0V
f = 1MHz
Output Capacitance C
oss
⎯ 57.3 ⎯ pF
Reverse Transfer Capacitance C rss
⎯ 33 ⎯ pF
Total Gate Charge (Note 13) Q
g
⎯ 9.6 ⎯ nC V
GS
= 5V
V DS = 50V
I
D
= 2.9A
Total Gate Charge (Note 13) Q
g
⎯ 17.16 ⎯ nC
V
GS
= 10V Gate-Source Charge (Note 13) Q
gs
⎯ 3.77 ⎯ nC
Gate-Drain Charge (Note 13) Q
gd
⎯ 5.36 ⎯ nC
Turn-On Delay Time (Note 13) t
D(on)
⎯ 4.9 ⎯ ns
V
DD
= 50V, V
GS
= 10V
I
D
= 1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 13) t
r
⎯ 3.7 ⎯ ns
Turn-Off Delay Time (Note 13) t D(off)
⎯ 17.7 ⎯ ns
Turn-Off Fall Time (Note 13) t
f
⎯ 9.4 ⎯ ns
Notes: 11. Measured under pulsed conditions. Pulse width
≤ 300µs; duty cycle ≤ 2%
12. For design aid only, not subject to production testing.
13. Switching characteristics are independent of operating junction temperatures.