Typical characteristics, Test circuits, Capacitance v drain-source voltage – Diodes ZXMN10A25K User Manual

Page 6: Ccapacit ance (pf ) v, Drain - source voltage (v), Gate-source voltage v gate charge, Q - charge (nc), Zxmn10a25k, A product line of diodes incorporated, Ga te- s our ce vol tage ( v )

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ZXMN10A25K

Document number: DS33569 Rev. 3 - 2

6 of 8

www.diodes.com

July 2012

© Diodes Incorporated

ZXMN10A25K

A Product Line of

Diodes Incorporated




Typical Characteristics

(cont.)

0.1

1

10

100

0

200

400

600

800

1000

1200

C

RSS

C

OSS

C

ISS

V

GS

= 0V

f = 1MHz

C

Capacit

ance (pF

)

V

DS

- Drain - Source Voltage (V)

0

2

4

6

8

10

12

14

16

18

0

2

4

6

8

10

I

D

= 2.9A

V

DS

= 50V

Gate-Source Voltage v Gate Charge

Capacitance v Drain-Source Voltage

Q - Charge (nC)

V

GS

G

a

te-

S

our

ce

Vol

tage (

V

)


Test Circuits

Current

regulator

Charge

Gate charge test circuit

Switching time test circuit

Basic gate charge waveform

Switching time waveforms

D.U.T

50k

0.2

␮F

12V

Same as

D.U.T

V

GS

V

GS

V

DS

V

G

Q

GS

Q

GD

Q

G

V

GS

90%

10%

t

(on)

t

(on)

t

d(on)

t

r

t

r

t

d(off)

V

DS

V

DD

R

D

R

G

Pulse width

Ͻ 1␮S

Duty factor 0.1%

V

DS

I

D

I

G




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