Diodes ZXMC3A17DN8 - Manual

1 S E M I C O N D U C T O R S
SUMMARY
N-Channel : V
(BR)DSS
= 30V : R
DS(on)
= 0.050 ; I
D
= 5.4A
P-Channel : V
(BR)DSS
= -30V : R
DS(on)
= 0.070 ; I
D
= -4.4A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
APPLICATIONS
•
Motor drive
•
LCD backlighting
DEVICE MARKING
•
ZXMC
3A17
ZXMC3A17DN8
ISSUE 1 - OCTOBER 2005
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL
ZXMC3A17DN8TA 7” 12mm 500 units
ZXMC3A17DN8TC 13” 12mm 2500 units
ORDERING INFORMATION
Q2 = P-channel
Top View
PINOUT
SO8
Q1 = N-channel