Diodes ZXMC3A17DN8 - Manual (Page 5)

ZXMC3A17DN8
S E M I C O N D U C T O R S
ISSUE 1 - OCTOBER 2005
ADVANCE INFORMATION
5
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown
Voltage
V
(BR)DSS
-30 V I
D
= -250 ␮A, V
GS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-1.0 ␮A V
DS
= -30V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.0 V I
D
= -250 ␮A, V
DS
=V
GS
Static Drain-Source
On-State Resistance (1)
R
DS(on)
0.070
0.110
⍀
⍀ V
GS
= -10V, I
D
= -3.2A
V
GS
= -4.5V, I
D
= -2.5A
Forward
Transconductance
(1) (3)
g
fs
6.4 S V
DS
= -15V, I
D
= -3.2A
DYNAMIC (3)
Input Capacitance C
iss
630 pF
V
DS
= -15V, V
GS
=0V
f=1MHz
Output Capacitance C
oss
113 pF
Reverse Transfer
Capacitance C
rss
78 pF
SWITCHING (2) (3)
Turn-On-Delay Time t
d(on)
1.7 ns
V
DD
= -15V, I
D
= -1A
R
G
≅ 6.0⍀,
V
GS
= -10V
Rise Time t
r
2.9 ns
Turn-Off Delay Time t
d(off)
29.2 ns
Fall Time t
f
8.7 ns
Gate Charge Q
g
8.3 nC V
DS
= -15V, V
GS
= -5V
I
D
= -3.2A
Total Gate Charge Q
g
15.8 nC
V
DS
= -15V, V
GS
=
-10V
I
D
= -3.2A
Gate-Source Charge Q
gs
1.8 nC
Gate Drain Charge Q
gd
2.8 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
SD
-0.85 -0.95 V T
j
=25°C, I
S
= -2.5A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
19.5 ns T
j
=25°C, I
S
= -1.7A,
di/dt=100A/ ␮s
Reverse Recovery Charge
(3)
Q
rr
16.3 nC
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES:
(1) Measured under pulsed conditions. Pulse width Յ 300ms; Duty cycle Յ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.