Diodes ZXMC3F31DN8 User Manual
Diodes Hardware
Issue 1 - September 2008 1
© Diodes Incorporated 2008
ZXMC3F31DN8
30V SO8 Complementary dual enhancement mode
MOSFET
Summary
Device
V
(BR)DSS
(V)
Q
G
(nC)
R
DS(on)
(
Ω)
I
D
(A)
0.024 @ V
GS
= 10V
7.3
Q1 30 12.9
0.039 @ V
GS
= 4.5V
5.7
0.045 @ V
GS
= -10V
5.3
Q2 -30 12.7
0.080 @ V
GS
= -4.5V
4
Description
This new generation Trench MOSFET from Zetex has been designed to
minimize the on-state resistance (R
DS(on)
) and yet maintain superior
switching performance making it ideal for power management and
battery charging functions.
Features
•
Low on-resistance
•
4.5V gate drive capability
•
Low profile SOIC package
Applications
•
DC-DC Converters
•
SMPS
•
Load switching switches
•
Motor control
•
Backlighting
Ordering information
Device marking
ZXMC
3F31
Device Reel
size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMC3F31DN8TA 7
12
500
D2
S2
G2
D1
Q1 N-Channel
Q2 P-Channel
S1
G1
D1
S1
G1
S2
G2
Top view
N
P
D1
D2
D2