Zxmc3f31dn8 – Diodes ZXMC3F31DN8 User Manual
Page 4
ZXMC3F31DN8
Q1 N-channel electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-Source breakdown
voltage
V
(BR)DSS
30 V
I
D
= 250
μA, V
GS
=0V
Zero Gate voltage Drain
current
I
DSS
0.5
µA
V
DS
=30V, V
GS
=0V
Gate-Body leakage
I
GSS
100
nA
V
GS
=
±
20V, V
DS
=0V
Gate-Source threshold
voltage
V
GS(th)
1.0 3.0
V
I
D
= 250
μA, V
DS
=V
GS
Static Drain-Source
on-state resistance
(
*
)
R
DS(on)
0.024
0.039
Ω
V
GS
= 10V, I
D
= 7.0A
V
GS
= 4.5, I
D
= 6.0A
Forward
Transconductance
(
*
) (†)
g
fs
16.5
S
V
DS
= 15V, I
D
= 7.0A
Dynamic
(†)
Input capacitance
C
iss
608
pF
Output capacitance
C
oss
132 pF
Reverse transfer
capacitance
C
rss
72 pF
V
DS
= 15V, V
GS
=0V
f=1MHz
Switching
(‡) (†)
Turn-on-delay time
t
d(on)
2.9
ns
Rise time
t
r
3.3
ns
Turn-off delay time
t
d(off)
16
ns
Fall time
t
f
8
ns
V
DD
= 15V, V
GS
=10V
I
D
= 1A
R
G
≅ 6.0Ω,
Total Gate charge
Q
g
12.9
nC
Gate-Source charge
Q
gs
2.5
nC
Gate-Drain charge
Q
gd
2.52
nC
V
DS
= 15V, V
GS
= 10V
I
D
= 7A
Source–Drain diode
Diode forward voltage
(
*
)
V
SD
0.82
1.2
V
I
S
= 1.7A,V
GS
=0V
Reverse recovery time
(‡)
t
rr
12
ns
Reverse recovery charge
(‡)
Q
rr
4.8
nC
I
S
= 2.2A,di/dt=100A/
μs
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%.
(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing
Issue 1 - September 2008 4
© Diodes Incorporated 2008