Zxmc3f31dn8 – Diodes ZXMC3F31DN8 User Manual

Page 7

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ZXMC3F31DN8

Q2 P-channel electrical characteristics (at T

amb

= 25°C unless otherwise stated)

Parameter Symbol

Min.

Typ.

Max.

Unit

Conditions

Static

Drain-Source breakdown
voltage

V

(BR)DSS

-30 V

I

D

= -250

μA, V

GS

=0V

Zero Gate voltage Drain
current

I

DSS

-5.0

µA

V

DS

=-30V, V

GS

=0V

Gate-Body leakage

I

GSS

-100

nA

V

GS

=

±

20V, V

DS

=0V

Gate-Source threshold
voltage

V

GS(th)

-1.0 -3.0

V

I

D

= -250

μA, V

DS

=V

GS

Static Drain-Source

on-state resistance

(

*

)

R

DS(on)

0.045

0.080

V

GS

= -10V, I

D

= -5.0A

V

GS

= -4.5V, I

D

= -4.0A

Forward

Transconductance

(

*

) (†)

g

fs

14

S

V

DS

= -15V, I

D

= -5.0A

Dynamic

(†)

Input capacitance

C

iss

670

pF

Output capacitance

C

oss

126 pF

Reverse transfer
capacitance

C

rss

70 pF

V

DS

= -15V, V

GS

=0V

f=1MHz

Switching

(‡) (†)

Turn-on-delay time

t

d(on)

1.9

ns

Rise time

t

r

3

ns

Turn-off delay time

t

d(off)

30

ns

Fall time

t

f

21

ns

V

DD

= -15V, V

GS

=-10V

I

D

= -1A

R

G

≅ 6.0Ω,

Total Gate charge

Q

g

12.7

nC

Gate-Source charge

Q

gs

2

nC

Gate-Drain charge

Q

gd

2.4

nC

V

DS

= -15V, V

GS

= -10V

I

D

= -5A

Source–Drain diode

Diode forward voltage

(

*

)

V

SD

-0.82

-1.2

V

I

S

= -2A,V

GS

=0V

Reverse recovery time

(‡)

t

rr

16.5

ns

Reverse recovery charge

(‡)

Q

rr

11.5

nC

I

S

= -2.1A,di/dt=100A/

μs

NOTES:

(*) Measured under pulsed conditions. Pulse width

≤ 300μs; duty cycle ≤ 2%.

(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing




Issue 1 - September 2008 7

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