Zxmc3f31dn8 – Diodes ZXMC3F31DN8 User Manual
Page 7
ZXMC3F31DN8
Q2 P-channel electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-Source breakdown
voltage
V
(BR)DSS
-30 V
I
D
= -250
μA, V
GS
=0V
Zero Gate voltage Drain
current
I
DSS
-5.0
µA
V
DS
=-30V, V
GS
=0V
Gate-Body leakage
I
GSS
-100
nA
V
GS
=
±
20V, V
DS
=0V
Gate-Source threshold
voltage
V
GS(th)
-1.0 -3.0
V
I
D
= -250
μA, V
DS
=V
GS
Static Drain-Source
on-state resistance
(
*
)
R
DS(on)
0.045
0.080
Ω
V
GS
= -10V, I
D
= -5.0A
V
GS
= -4.5V, I
D
= -4.0A
Forward
Transconductance
(
*
) (†)
g
fs
14
S
V
DS
= -15V, I
D
= -5.0A
Dynamic
(†)
Input capacitance
C
iss
670
pF
Output capacitance
C
oss
126 pF
Reverse transfer
capacitance
C
rss
70 pF
V
DS
= -15V, V
GS
=0V
f=1MHz
Switching
(‡) (†)
Turn-on-delay time
t
d(on)
1.9
ns
Rise time
t
r
3
ns
Turn-off delay time
t
d(off)
30
ns
Fall time
t
f
21
ns
V
DD
= -15V, V
GS
=-10V
I
D
= -1A
R
G
≅ 6.0Ω,
Total Gate charge
Q
g
12.7
nC
Gate-Source charge
Q
gs
2
nC
Gate-Drain charge
Q
gd
2.4
nC
V
DS
= -15V, V
GS
= -10V
I
D
= -5A
Source–Drain diode
Diode forward voltage
(
*
)
V
SD
-0.82
-1.2
V
I
S
= -2A,V
GS
=0V
Reverse recovery time
(‡)
t
rr
16.5
ns
Reverse recovery charge
(‡)
Q
rr
11.5
nC
I
S
= -2.1A,di/dt=100A/
μs
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%.
(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing
Issue 1 - September 2008 7
© Diodes Incorporated 2008