Diodes ZXMS6004DT8 User Manual

Mosfet

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ZXMS6004DT8

Document Number DS32245 Rev. 1 - 2

1 of 9

www.diodes.com

June 2010

© Diodes Incorporated

A Product Line of

Diodes Incorporated

ZXMS6004DT8
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET

MOSFET

SUMMARY

Continuous drain source voltage 60 V

On-state resistance

500 m

Ω


Nominal load current (V

IN

= 5V) 1.2 A


Clamping Energy

210 mJ

DESCRIPTION

The ZXMS6004DT8 is a dual self protected low side MOSFET
with logic level input. It integrates over-temperature, over-
current, over-voltage (active clamp) and ESD protected logic level
functionality independently per channel. The ZXMS6004DT8 is
ideal as a general purpose switch driven from 3.3V or 5V
microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.


FEATURES


• Compact dual package

• Low input current

• Logic Level Input (3.3V and 5V)
• Short circuit protection with auto restart

• Over voltage protection (active clamp)

• Thermal shutdown with auto restart

• Over-current

protection

• Input Protection (ESD)

• High continuous current rating

ORDERING INFORMATION


DEVICE

PART

MARK

REEL SIZE

(inches)

TAPE WIDTH

(mm)

QUANTITY PER

REEL

ZXMS6004DT8TA

ZXMS

6004D

7

12 embossed

1,000 units

SM8 Package

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